Reactive ion etch processes for zinc oxide (ZnO) and indium-tin oxide (TTO) have been characterized under various power, pressure, flow rate, and temperature conditions. We have found that the use of hydrogen iodide (HI) plasma allows 2um features with vertical sidewalls to be pattern in both materials. The etch was selective with respect to Si3N4, SiO2, and Si. In addition, the resistivity of ITO prepared by RF supttering was characterized under different deposition conditions.
December 31, 1988
Minami, E. (1988). Reactive Ion Etching Og Zinc Oxide and Indium-tin-oxide: Research Project. United States: University of California, Berkeley.