Abstract:
This report describes a novel low-temperature silicon-silicon bonding process using boron glass. Using this method, silicon wafers can be sealed together at 450C. The process is extremely sensitive to phosphorus. The integration of the boron-glass bonding process with MOS processing is discussed.
Publication date:
December 31, 1988
Publication type:
Master's Thesis
Citation:
Field, L. A. (1988). Low-temperature Silicon-Silicon Bonding with Oxides: Research Project. United States: University of California, Berkeley.