Low Temperature Silicon-Silicon Bonding with Oxides


This report describes a novel low-temperature silicon-silicon bonding process using boron glass. Using this method, silicon wafers can be sealed together at 450C.  The process is extremely sensitive to phosphorus.  The integration of the boron-glass bonding process with MOS processing is discussed.

Publication date: 
December 31, 1988
Publication type: 
Master's Thesis
Field, L. A. (1988). Low-temperature Silicon-Silicon Bonding with Oxides: Research Project. United States: University of California, Berkeley.

*Only registered BSAC Industrial Members may view project materials & publications. Click here to request member-only access.