NanoTechnology: Materials, Processes & Devices

Research that includes:

  • Development of nanostructure fabrication technology
  • Nanomagnetics, Microphotonics
  • CMOS Integrated Nanowires/Nanotubes (CMOS-Inn)

BPN837: Metal Oxide-Coated Carbonized-Silicon Nanowires as High-Performance Micro-Supercapacitor

Dr. Yuan Gao
Sinem Ortaboy
Chuan-Pei Lee

With the rapid development of modern digital technology, micro-supercapacitors show tremendous potential to complement or replace conventional electrolytic capacitors and batteries due to their small dimension, high power density, high electrochemical efficiency and long cyclic life. In particular, porous silicon nanowires (PSiNWs) and their derivatives have attracted great attention owing to their high surface areas and ease of integration with the microfabrication methodology. In this project, we are developing a novel metal oxide-coated carbonized PSiNWs electrodes for micro-...

BPN995: Growth of Metal Organic Framework (MOF) Crystals under Microgravity and their Prospects for Chemical Sensing

Yaprak Ozbakir
Liam McDonough
Sai Munagavalasa
HyoJun Min
Pat Taedullayasatit

Metal-organic frameworks (MOFs) are porous, high surface area materials that consist of metal-cluster nodes connected by organic linkers to form highly ordered structures with various pore geometries and chemical properties. Due to their unique and tunable structure, MOFs have shown substantial promise in a broad range of applications, including chemical sensing, gas adsorption and separation, and catalysis. To investigate the intrinsic properties of MOFs for their sensing performance, single crystals are ideal platforms that mitigate the impact of defects, impurities, and grain...

BPN986: Integrated Microlens Coupler for Photonic Integrated Circuits

Jianheng Luo
Johannes Henriksson

We design and experimentally demonstrate a new silicon photonic fiber coupling method using integrated microlens couplers. Efficient, broadband and polarization-insensitive coupling to a single mode fiber with a best coupling loss of 0.8 dB is achieved.

Project currently funded by: Industry Sponsor

BPNX1000: Atomic Force Nanomechanical Qubit (New Project)

Shahin Jahanbani
Binhan Hua
Kadircan Godeneli
Haoxin Zhou
Zihuai Zhang

Ultralong lifetimes of silicon nanomechanical resonators at cryogenic temperatures and microwave frequencies make them promising resources in quantum engineering. In this work, we propose a nanomechanical qubit achieving strong single-phonon level anharmonicity of 5 MHz without the need for coupling to an ancillary qubit of a hybrid quantum architecture. This qubit design combines a nano-machined silicon cantilever brought in proximity to a silicon surface using microelectromechanical actuators. The surface forces between the cantilever and the silicon surface provide an effective...

Dehui Zhang

Postdoctoral Researcher
Electrical Engineering and Computer Sciences
Professor Ali Javey (Advisor)

Dehui Zhang is a postdoctoral researcher in Electrical Electrical Engineering and Computer Sciences at the University of California, Berkeley, a postdoctoral researcher at Berkeley Sensor & Actuator Center (BSAC), and a research affiliate in the Materials Science Division at Lawrence Berkeley National Laboratory. He received a Ph.D. in Electrical and Computer Engineering from University of Michigan, Ann Arbor in 2021, and was a postdoctoral researcher at University of California, Los Angeles in 2021-2023. Dehui Zhang joined Javey Research Group in September 2023...

BPNX1011: Nanoscale Electronics with Tellurium (New Project)

I K M Reaz Rahman
Naoki Higashitarumizu

Tellurium has a one-dimensional atomic structure that favors anisotropic electronic properties. Thermally evaporated tellurium has intrigued renewed interest in nanoscale electronics due to its near ambient crystallization, featuring single crystal orientation in micro-sized domain. Here we aim to study the performance limits of tellurium thin film transistors as we scale them to single grain domains. This will allow us to test the performance limits of tellurium transistors and pave the way for its viability for integration with standard silicon processes.


BPNX1023: CMOS-Compatible Doping of 2D Semiconductors (New Project)

Inha Kim

2D materials are among the most promising candidates for next-generation semiconductor devices due to their exceptional electronic transport properties and composition of a single atomic layer, which offers significant advantages for integration density. However, high contact resistance and challenges in doping present obstacles to their practical applications. In this work, we aim to explore various methods to overcome these issues and achieve technological breakthroughs that will enable these materials to become integral components in a wide range of applications.


BPNX1014: Data-Driven Design of Metamaterials (New Project)

Marco Maurizi
Desheng Yao
Anish Satpati

The rapid development of additive manufacturing technologies has enabled the fabrication of truss metamaterials, i.e., a novel class of lightweight-yet-strong materials with engineered complex hierarchical structures. Manipulating the architecture over chemical composition dramatically expands the achievable materials design space, allowing to largely control the mechanical response of metamaterials. Despite the great advances made in this area, designing three-dimensional (3D) truss metamaterials under complex or extreme conditions with programmable response is still a...

BPNX1021: Realizing Three-Dimensional Alignment of Two-Dimensional Material for Isotropic Properties Enhancement via Embedded Direct Ink Writing (New Project)

Qiyi Chen

The orientation of fibrous fillers, induced by shear forces during extrusion, has been demonstrated to significantly enhance mechanical properties, electrical/thermal conductivity, microwave attenuation etc., albeit primarily in a two-dimensional (2D) x-y plane. In this study, we present a novel approach for achieving fiber alignment in a three-dimensional (3D) context, with an emphasis on the Z-direction, by utilizing embedded 3D printing techniques. This process involves the extrusion and suspension of composite inks within a viscoelastic gel medium, during which the...

BPNX1006: Quantitative Optical Characterization of Indium Selenide

Jamie Geng

Indium selenide is a promising 2D semiconductor that has garnered interest as a material for novel transistors. However, the optical properties of InSe and its potential as a platform for optoelectronic devices have not yet been fully explored. It is known that InSe has a direct bandgap near 1.25 eV2, and preliminary work on high-quality InSe grown by NIST has shown that it exhibits high quantum efficiency. Coupled with its previously shown high mobility, this suggests that it may be an excellent material for near infrared (NIR) sensing and emission for applications such as night...