Subtractive Microfluidics in CMOS

Abstract: 

This paper introduces a microfluidics platform embedded within a silicon chip implemented in CMOS technology. The platform utilizes a one-step wet etching method to create fluidic channels by selectively removing CMOS back-end-of-line (BEOL) routing metals. We term our technique “subtractive” microfluidics, to complement those fabricated with additive manufacturing. Three types of structures are presented in a TSMC I80-nm CMOS chip: (1) passive microfluidics in the form of a micro-mixer and a 1: 64 splitter, (2) fluidic channels with embedded ion-sensitive field-effect transistors (ISFETs) and Hall sensors, and (3) integrated on-chip impedance-sensing readout circuits including voltage drivers and a fully differential transimpedance amplifier (TIA). Sensors and transistors are functional pre-and post-etching with minimal changes in performance. Our CMOS subtractive microfluidics technique enables tight integration of fluidics and electronics, paving the way for future small-size, high-throughput lab-on-chip (LOC) devices.

Author: 
Wei-Yang Weng
Xiang Zhang
Yan-Ting Hsiao
Publication date: 
December 11, 2024
Publication type: 
Conference Paper (Proceedings)
Citation: 
W. -Y. Weng, A. Di, X. Zhang, Y. -C. Tsai, Y. -T. Hsiao and J. -C. Chien, "Subtractive Microfluidics in CMOS," 2024 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2024, pp. 1-4, doi: 10.1109/IEDM50854.2024.10873317.

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