BPN980: Spin-Photon Interfaces in Silicon Photonics

Abstract: 

Point defects in crystalline materials can introduce localized defects states with optical transitions, creating color centers. Color centers in silicon have recently shown their potential as telecom-band single photon emitters. Leveraging the mature semiconductor fabrication techniques, silicon color centers can be fabricated on a large scale and are compatible with integrated photonics.  Among all the silicon color centers investigated so far, T centers provide a spin-photon interface suitable for quantum networking and communication applications. In this project, we demonstrate coherent control of multiple spin qubit registers with one T center in silicon photonics. With this system, we plan to study the spin properties and spin dynamics in nature silicon. These studies will enable the development of  color centers in silicon for scalable quantum computation and communication. 

Project currently funded by: Federal

Publication date: 
August 13, 2024
Publication type: 
BSAC Project Materials (Current)
Citation: 
PREPUBLICATION DATA - ©University of California 2024

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