Color centers in silicon have recently shown their potential as telecom-band single photon emitters with high scalability and compatibility with silicon photonics. The silicon color centers investigated so far, however, are not suitable for quantum computation and communication applications which require quantum memories for storing and processing quantum information transmitted by photons. Such quantum memories can be implemented using the electron and nuclear spins of color centers that provide long-lived quantum states. In this project, we are investigating new color centers that combine long-lived spin memories and efficient optical transitions to develop a near-ideal qubit in silicon that can be scalably fabricated. Collaborating with theorists performing high throughput screening of electronic properties of various defects in silicon, this project aims to fabricate the most promising color center candidates with ion implantation. We will describe our plans and progress on the creation and characterization of these new systems using electrical and optical techniques. These studies will enable the development of new color centers in silicon for scalable quantum computation and communication.
Project currently funded by: Federal