BPN996: Multiplexed Cavity-Enhanced Quantum Emitters in Silicon


Color centers in silicon are a promising platform for realizing scalable quantum repeater nodes. The T center in silicon features long electron and nuclear spin coherence times and spin-dependent optical transitions. To build efficient spin-photon interfaces, we integrate T centers inside silicon photonic crystal cavities (PCC) which can achieve exceptional quality factors and small mode volumes, enhancing desired optical transitions. However, fabrication disorder limits the control precision of PCC resonances, requiring post-fabrication tuning strategies. We develop a novel approach in which a bus waveguide is evanescently coupled to an array of PCCs with precise frequency tunability. We condense nitrogen gas and use site-selective sublimation via resonant laser heating to tune a desired cavity. We use this platform to enable optical addressing of multiple strongly-enhanced T centers from distinct cavities in parallel, achieving a minimum lifetime of 70 nanoseconds.

Project is currently funded by: Federal

Publication date: 
February 16, 2024
Publication type: 
BSAC Project Materials (Current)
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