NanoTechnology: Materials, Processes & Devices

Ultralong lifetimes of silicon nanomechanical resonators at cryogenic temperatures and microwave frequencies make them promising resources in quantum engineering. In this work, we propose a nanomechanical qubit achieving strong single-phonon level anharmonicity of 5 MHz without the need for coupling to an ancillary qubit of a hybrid quantum architecture. This qubit design combines a nano-machined silicon cantilever brought in proximity to a silicon surface using microelectromechanical actuators. The surface forces between the cantilever and the silicon surface provide an effective...

Tellurium has a one-dimensional atomic structure that favors anisotropic electronic properties. Thermally evaporated tellurium has intrigued renewed interest in nanoscale electronics due to its near ambient crystallization, featuring single crystal orientation in micro-sized domain. Here we aim to study the performance limits of tellurium thin film transistors as we scale them to single grain domains. This will allow us to test the performance limits of tellurium transistors and pave the way for its viability for integration with standard silicon processes.

Project...

The rapid development of additive manufacturing technologies has enabled the fabrication of truss metamaterials, i.e., a novel class of lightweight-yet-strong materials with engineered complex hierarchical structures. Manipulating the architecture over chemical composition dramatically expands the achievable materials design space, allowing to largely control the mechanical response of metamaterials. Despite the great advances made in this area, designing three-dimensional (3D) truss metamaterials under complex or extreme conditions with programmable response is still a...

Indium selenide is a promising 2D semiconductor that has garnered interest as a material for novel transistors. However, the optical properties of InSe and its potential as a platform for optoelectronic devices have not yet been fully explored. It is known that InSe has a direct bandgap near 1.25 eV2, and preliminary work on high-quality InSe grown by NIST has shown that it exhibits high quantum efficiency. Coupled with its previously shown high mobility, this suggests that it may be an excellent material for near infrared (NIR) sensing and emission for applications such as night...