Package, Process & Microassembly

Research that includes:

  • Low temperature MEMS-on-CMOS Silicon-Germanium process for adding MEMS to finished CMOS wafers or dice
  • Silicon Carbide process for adverse environment MEMS and high frequency RF resonators
  • Localized bonding: eutectic, fusion, solder, laser, inductive, rapid thermal processing, and ultrasonic; suitable for device level or wafer level packaging or sealing applications to plastic, glass, silicon and Bio materials, including liquid encapsulation
  • Fluidic microassembly for post-process combining of dissimilarly processed microdevices
  • Carbon nanotube and silicon nanowire directional growth in post-process, low ambient temperature environments
  • Stiction mitigation for MEMS

RTH32: Fluidic Microassembly for Microfluidic Applications

Frank Zendejas
2003

The project encompasses the extension of capillary-based fluidic self-assembly [1] to the assembly of silicon microparts on polydimethylsiloxane (PDMS).

Project end date: 02/09/04

RTH31: Electrical Interconnect of Components Transferred by Fluidic Microassembly Using Capillary Forces

Karen L. Scott
2003

The overall objective of this project is to extend the understanding of the fluidic microassembly technique using capillary forces. Specifically, the focus has been to obtain single to multiple electrical interconnects between microcomponents and the substrate.

Project end date: 02/10/04

RM6: Adhesion in MEMS

Robert Ashurst
Elizabeth E. Parker
2004

The ultimate goal of this project is to further develop previous work that involved adhesion studies in MEMS devices.

Project end date: 08/18/04

BSAC1: FTIR In Situ Depth Measurement System for DRIE

Matthew Wasilik
Ning Chen
2004

An in-situ, real-time metrology system was developed, integrated, and tested for measuring the depth of MEMS device structures during deep reactive ion etch (DRIE) processing in The UCB Microlab’s STS. The DRIE process is used to fabricate high-aspect-ratio silicon structures via a special switched-gas (Bosch process) plasma etch scheme. DRIE is promising technology in that it is capable of delivering MEMS devices at a relatively low cost. However, a major difficulty with this type of processing is the control of etch depth. Our research shows that it is possible to monitor the etch...

LWL14: Selective Induction Heating for MEMS Packaging

Andrew Cao
2004

Develop a wafer bonding and hermetic sealing technology based on induction heating for MEMS and IC post packaging.

Project end date: 08/19/04

BSAC4: DRIE Process Optimization for Very Smooth Sidewall Etch

Ning Chen
2004

Long term goal for this project is to develop a robust deep reactive ion etch process for a smooth sidewall through wafer etching, while maintaining a straight profile, good etch rate, and reasonable selectivity.

Project end date: 01/20/05

LWL29: Nano-Getters for MEMS Applications

Daoheng Sun
Dane Christensen
2005

High vacuum inside a micro-cavity is hoped to be obtained and maintained for lifetime of a MEMS. This project will supply design rules of getter dimensions in MEMS packaging by exploring the relationships of the residual gas pressure and its variety in a cavity with (1) the different getter materials, such as Ti, Zr, V, and their mixture, (2) the surface area, thickness, and amount of the getter deposited respectively. Multi-times activating the getter by means of localized heating to improve the efficiency of it. Develop nano-getter with high porosity and large surface area. Design...

LWL18: Integration of NEMS and MEMS by Localized Growth of Nanowires

Ongi Englander
2005

Integrated manufacturing of nano-to-micro systems is critical for the practical applications of nanotechnology. This research project aims (1) to develop and characterize an integrated manufacturing process to connect nanostructures with micro scale systems and (2) to utilize the integrated structure for practical sensing applications.

Project end date: 08/31/05

KSJP33a: Tools for Microassembly

Subramaniam Venkatraman
2005

Complex three dimensional micromechanical systems can be built using multi-layer MEMS processes. There is however a tradeoff available between process complexity and post-fabrication complexity (assembly operations). In this project, we fabricate sockets, connectors and the tools to pick up and rotate them using a single mask Silicon-on-Insulator (SOI) process. We then use pick and place assembly to create complex mechanical micro-systems which are difficult to realize with conventional fabrication techniques.

Project end date: 08/31/05

RTH40: Effects of Boron Concentration on Si1-xGex Properties for Integrated MEMS Technology

Marie-Ange Eyoum
2005

Because of its low thermal budget that allows to fabricate MEMS micromachined structures directly on top of electronics, SiGe MEMS technology remains very attracting for the monolithic integration of MEMS with CMOS [1]-[3]. In this scheme, p+Ge would replace Silicon dioxide as the sacrificial layer while p+ SiGe would replace poly Silicon as the structural layer.

Project end date: 09/01/05