Ali Javey (Advisor)

Research Advised by Professor Ali Javey

Javey Group:  List of Projects | List of Researchers

BPN635: Structured Substrates for Enhancing the Water-Splitting Efficiency of Earth Abundant Materials

Maxwell Zheng
2011

Here we focus on nano- and micro-structuring earth abundant materials to improve their water splitting performance, primarily by increasing the optical path length. The focus is on isolating structural effects and so we fix the material system to be titanium dioxide. In one structure we use texturized carbon nanotubes as the back contact. In another, we are planning to use micro-scale triangular grooves.

Project end date: 02/06/12

BPN641: InAs XOI Gas Sensor

Junghyo Nah
2011

The objective of InAs XOI gas sensor project is twofold. First, the role of size effect on sensor performance will be systematically investigated. Our XOI device structure provides a unique platform to perform this study since we can precisely control material thicknesses and transfer them on a SiO2/Si substrate. Based on this study, we will determine physical role of size effect on sensor performance. This result will be also essential to determine an optimum NR thickness for gas sensors. Secondly, we will implement multiple gas detection sensor modules on a single chip by...

BPN640: p-InP nanopillars for highly efficient water splitting

Min Hyung Lee
2011

The photoelectrochemical evolution of hydrogen using p-InP nanopillar arrays decorated with metallic co-catalyst is explored. The nanopillar devices exhibit an great enhancement in the conversion efficiency, as compared to planar substrates. This behavior is mainly attributed to the low surface reflectivity of nanopillar arrays along with the enhanced surface area for catalytic reactions. Of particular importance to this architecture is the use of InP as the absorber layer, which is known to have a low carrier surface recombination velocity, thereby minimizing the loss of...

BPN567: Compound Semiconductor on Insulator (XOI) FETs

Rehan R. Kapadia
Kuniharu Takei
Hui Fang
Steven Chuang
2012

Due to their high mobility, the integration of compound semiconductors on Si has been actively studied over the past several years. This integration, however, presents significant challenges. The conventional method of addressing this problem consists of growth of multiple epilayers of materials to address the lattice mismatch between Si and the desired semiconductor, leading to highly complex fabrication techniques. Here we demonstrate high performance compound semiconductor on insulator (XOI) field effect transistors (FET) consisting of ultra-thin InAs nanoribbons (NR) on insulator...

BPN667: Optical Absorption Study of 2-Dimensional III-Vs

Hui Fang
Kuniharu Takei
2012

Recently, a new type of 2-D material, free standing InAs nanomembranes (thickness of 3 - 19 nm), as a representative of III-V semiconductors, was realized by layer transfer and this enables optical studies of 2-D InAs which were previously inaccessible, by decoupling those ultra-thin layers from original growth substrates to any optically transparent substrates. By using Fourier Transform Infrared (FTIR) spectroscopy, we directly observe the optical transitions from 2-D subbands, with energy spacing in line with the particle in the box model. Furthermore, it is found that the...

BPN533: Nanomaterial-Based Artificial Skin Sensor

Kuniharu Takei
Toshitake Takahashi
Chuan Wang
2012

Flexible large-scale devices are of great interest for wearable human interface applications. We have developed a technique of "uniform nanomaterial patterning" for the integration of high- performance inorganic nanomaterials on user-defined substrates. This project is to realize large scale flexible multi-functional electronics by utilizing nanomaterials such as nanowires, nanotubes, and nanoparticles. As one of applications, we here demonstrate mechanically flexible large scale high sensitive multi-functional artificial skin by proposing different types of sensors such as a...

BPN469: Ultra-Short Channel 1D-2D Compound Semiconductor on Insulator (XOI) FETs

Steven Chuang
Kuniharu Takei
2013

Recently, compound semiconductor on insulator(XOI)has risen as a promising platform for next generation high performance electronics, as it inherits advantages from both SOI and high mobility III-V materials. In order to test the performance limit of this platform, we plan on fabricating ultra-short channel XOI FETs. This project will involve various controlled experiments to better understand the underlying physics of XOI FETs, thus allowing us to progress towards the ultimate XOI FET.

Project end date: 08/16/13

BPN629: Large-Scale Carbon Nanotube Network Active Matrix Circuitry for Flexible and Stretchable Electronics

Toshitake Takahashi
Kuniharu Take
Chuan Wang
2013

In this project, we will explore a promising approach for large-scale flexible and stretchable electronics using semiconductor-enriched carbon nanotube (CNTs) solution. In conventional flexible devices, organic materials or amorphous silicon have been intensively explored, but its inherently low electrical performance limits the range of potential applications. Here, we use solution-based approach in which semiconductor-enriched CNTs (99 %) are deposited uniformly on wafer-scale flexible polyimide (PI) substrate or Polydimethylsiloxane (PDMS) substrate at room temperature, and obtain...

BPN659: High Performance Flexible Integrated Circuits Using Carbon Nanotube Networks

Chuan Wang
Kuniharu Takei
Toshitake Takahashi
2013

In this Project, we report the use of high-purity semiconducting carbon nanotube networks and 2-dimensional III-V nanomembranes for high-performance integrated circuits on mechanically flexible substrates for digital, analog, and radio-frequency applications. We have demonstrated high-performance carbon nanotube thin-film transistors (TFTs) with on-current, transconductance, and field-effect mobility up to 15 uA/um, 4 uS/um, and 50 cm2/Vs. Using such devices, digital logic gates with superior bending stability have been demonstrated. We have also employed a self-aligned device...

BPN686: Spatially Controlled Growth of III-V Semiconductors Toward Low-Cost and High-Efficiency PVs

Daisuke Kiriya
Maxwell Zheng
Rehan Kapadia
Zhibin Yu
2013

So far, extensive research has been carried out for III-V semiconductor materials from crystal growth to device fabrications. The reason for this is that III-V shows the highest energy conversion efficiency due to high absorption coefficient and optimal and direct band gap. However, there is problem for III-V applications, which is the high cost of raw materials. We are exploring a method which addresses this limitation. High optical quality crystals have been grown on selected tiny areas to make array of crystals such as on metal foils. This should be useful as a PV without any loss...