In the past years, integration of III-V materials on Si have been thoroughly investigated, in order to combine the well establish, low cost, processing of the Si technology with the high mobility of III-V semiconductors for high performance electron devices. In this work, direct bonding of InAs nanoribbons on Si/SiO2 (XOI) is proposed as a method for obtaining high performance nanoscale transistors with clean and purely inorganic interfaces between InAs and SiO2.
Project end date: 02/03/11
August 30, 2010
BSAC Project Materials (Final/Archive)
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