BPN588: Direct Bonding of Ultra-Thin InAs on SiO2 for High Performance Transistors


In the past years, integration of III-V materials on Si have been thoroughly investigated, in order to combine the well establish, low cost, processing of the Si technology with the high mobility of III-V semiconductors for high performance electron devices. In this work, direct bonding of InAs nanoribbons on Si/SiO2 (XOI) is proposed as a method for obtaining high performance nanoscale transistors with clean and purely inorganic interfaces between InAs and SiO2.

Project end date: 02/03/11

Publication date: 
August 30, 2010
Publication type: 
BSAC Project Materials (Final/Archive)
PREPUBLICATION DATA - ©University of California 2010

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