We have previously created a new doping method of semiconductor-monolayer doping (MLD). This method can fulfill the need of the shrinking size of devices by making ultra shallow junctions. More importantly, it causes much less lattice damage in the crystal than conventional ion-implantation technique. In this project, we are going to apply MLD to sub-5 nm-wide patterned lines (by the e-beam lithography), which is very essential to achieve future nanoscale VLSI. The doping profile will be characterized by C-V measurement.
Project end date: 08/10/10
January 30, 2010
BSAC Project Materials (Final/Archive)
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