BPN531: Gigahertz Operation of Flexible Transistors Using InAs Nanomaterial Arrays


In this project, we present NW-based high frequency flexible transistors operating in gigahertz regime. InAs NWs are printed on polyimide (PI) substrate with contact printing method, in which semiconducting NWs on the growth chip can be directly transferred to and aligned on the receiver substrate. Thus fabricated NW-based devices have ft = 1.04 GHz (unit transit frequency of the current gain) and fmax = 1.8 GHz (maximum frequency of oscillation). These results promise the potential of NW-based flexible TFT for future microwave applications.

Project end date: 08/16/11

Publication date: 
February 2, 2011
Publication type: 
BSAC Project Materials (Final/Archive)
PREPUBLICATION DATA - ©University of California 2011

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