BPN461: Low Energy Electronics


We introduce a novel transistor based on the inter-band tunneling by III-V materials. The type II staggered heterojunction between two compound semiconductors can provide an electron tunneling by quantum mechanical effect from the valence band to the conduction band of semiconductors, and result in reduced sub-threshold swing compared to diffusion in MOSFETs. This allows for these devices to be operated at lower voltages, and thus function with less power consumption.

Project end date: 08/18/11

Ha sul Kim
Publication date: 
August 18, 2011
Publication type: 
BSAC Project Materials (Final/Archive)
PREPUBLICATION DATA - ©University of California 2011

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