We introduce a novel transistor based on the inter-band tunneling by III-V materials. The type II staggered heterojunction between two compound semiconductors can provide an electron tunneling by quantum mechanical effect from the valence band to the conduction band of semiconductors, and result in reduced sub-threshold swing compared to diffusion in MOSFETs. This allows for these devices to be operated at lower voltages, and thus function with less power consumption.
Project end date: 08/18/11
August 18, 2011
BSAC Project Materials (Final/Archive)
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