RTH/TJK2: As-Grown SiGe Thin Film with Low Stress and Low Strain Gradient


Monolithic integration of MEMS devices with driving and controlling electronics is advantageous for improving performance and lowering cost. Polycrystalline silicon-germanium (poly-SiGe), which has mechanical and electrical properties similar to poly-Si, is a promising candidate for the structural-layer material of post-CMOS integration of MEMS because poly-SiGe can be deposited at much lower temperatures than poly-Si. While low-resistivity poly-SiGe can be easily obtained utilizing in-situ p-type (i.e. boron) doping during deposition, poly-SiGe films deposited at temperatures lower than 450°C generally exhibit some level of residual stress and strain gradient. The goal of this research is to reduce the stress and strain gradient in low-temperature deposited films without using any high temperature annealing.

Project end date: 08/22/03

Blake C.-Y. Lin
Publication date: 
July 31, 2003
Publication type: 
BSAC Project Materials (Final/Archive)
PREPUBLICATION DATA - ©University of California 2003

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