RTH39: Post-process of GHz-range SiGe Resonators Over Standard RF CMOS Circuitry for Transceiver Applications

While MEMS resonators are about to demonstrate their potential for future transceiver architectures, the need for low parasitics low power performances implies shrinkage towards fully integrated systems. The preliminary goal of this project is to provide access to a post-process scheme of SiGe structures that enables integration of GHz resonators with Deep-Submicron CMOS RF ICs available from commercial vendor.

Project end date: 08/31/05