This project seeks to make Silicon Carbide thin films available to MEMS researchers and designers. A process developed in the Maboudian Lab at UC Berkeley which currently accommodates 2-inch wafers will be scaled up to accommodate 4- and 6-inch wafers. High quality poly-crystalline 3C-SiC films deposited at reasonable growth rates, with controlled residual stress, controlled strain gradient, controlled resistivity, and high uniformity will be sought. Once films with high overall quality and repeatability are grown the process will be released to the MEMS community.
Project end date: 01/28/08
August 3, 2007
BSAC Project Materials (Final/Archive)
PREPUBLICATION DATA - ©University of California 2007