Color centers in silicon are promising building blocks for photonic quantum processors. The T center, with its long spin coherence and telecom-band optical transitions, is a particularly compelling candidate for quantum repeater and memory applications. However, the impact of local charges and spins introduced during device integration remains poorly understood. In this work, we develop a silicon photonics platform that enables probing of single T centers under applied electric and magnetic fields, allowing systematic investigation of Stark shifts and ionization dynamics. These capabilities could enable spin-to-charge conversion and higher-fidelity readout protocols, advancing the scalability of silicon-based quantum technologies.
Project is currently funded by: Federal