BPNX1023: CMOS-Compatible Doping of 2D Semiconductors

2D materials are among the most promising candidates for next-generation semiconductor devices due to their exceptional electronic transport properties and composition of a single atomic layer, which offers significant advantages for integration density. However, high contact resistance and challenges in doping present obstacles to their practical applications. In this work, we aim to explore various methods to overcome these issues and achieve technological breakthroughs that will enable these materials to become integral components in a wide range of applications.

Project is currently funded by: Federal