Abstract:
Tellurium has a one-dimensional atomic structure that favors anisotropic electronic properties. Thermally evaporated tellurium has intrigued renewed interest in nanoscale electronics due to its near ambient crystallization, featuring single crystal orientation in micro-sized domain. Here we aim to study the performance limits of tellurium thin film transistors as we scale them to single grain domains. This will allow us to test the performance limits of tellurium transistors and pave the way for its viability for integration with standard silicon processes.
Project is currently funded by: Federal
Publication date:
August 10, 2024
Publication type:
BSAC Project Materials (Current)
Citation:
PREPUBLICATION DATA - ©University of California 2024