Indium selenide is a promising 2D semiconductor that has garnered interest as a material for novel transistors. However, the optical properties of InSe and its potential as a platform for optoelectronic devices have not yet been fully explored. It is known that InSe has a direct bandgap near 1.25 eV2, and preliminary work on high-quality InSe grown by NIST has shown that it exhibits high quantum efficiency. Coupled with its previously shown high mobility, this suggests that it may be an excellent material for near infrared (NIR) sensing and emission for applications such as night vision and silicon photonics. While other 2D materials that emit in the NIR range such as black phosphorus (BP) and transition metal dichalcogenides (TMDs) exist, researchers are still challenged by their limited quantum efficiencies - a problem that may not exist for InSe. Before viable optoelectronic devices can be fabricated from InSe, its optical properties must be more deeply characterized and understood.
Project is currently funded by: State & Other Govt