Abstract:
Wide band gap semiconductors are crucial for applications in power electronics, displays, solid-state lightning and many other fields. Due to their intrinsic structure and electronic properties, many wide band gap semiconductors can not be intentionally doped as desired, which limits their role in electronic and optoelectronic devices. In this project, we propose tuning the optoelectronic properties of wide band gap semiconductors electrically to enhance its luminescence efficiency.
Project ended: 02/07/2024
Publication date:
August 21, 2023
Publication type:
BSAC Project Materials (Final/Archive)
Citation:
PREPUBLICATION DATA - ©University of California 2023