BPN928: Black Phosphorous Based Infrared Light Emitting Diodes


Two-dimensional (2D) materials such as MoS2 and black phosphorous (bP) have shown promise for high performance optoelectronic and electronic applications, due to their naturally terminated surfaces. Unlike the majority of 2D materials, which are only direct bandgap at the monolayer limit, bP maintains a direct bandgap for all thickness, which ranges from 1.4 to 0.3 eV. This property can be leveraged to demonstrate light emitting diodes (LEDs) based on bP/MoS2 heterostructures. High EQE can be achieved with the LED in the mid-wave infrared region. Further, the emission wavelength of bP/MoS2 LEDs can be tuned from 0.94 to 4.5 µm by varying bP thickness. This efficient and tunable emission enables the use of bP/MoS2 LEDs in non-dispersive-infrared (NDIR) gas sensors.

Project end date: 01/27/20

Publication date: 
August 8, 2019
Publication type: 
BSAC Project Materials (Final/Archive)
PREPUBLICATION DATA - ©University of California 2019

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