BPN784: Aluminum Gallium Nitride 2DEG Sensors and Devices


Two dimensional electron gas (2DEG) and hole gas (2DHG) can be induced at the interface of epitaxial AlGaN/GaN due to spontaneous and piezoelectric polarization. Such electronic system features high transport mobility, carrier density and piezoelectric sensitivity. Mechanical strain and vibrations of devices can be transduced to electronic signals in embeded 2DEG for further processing. In this project, we study physical properties of this strongly-coupled electromechanical system, and develop possible devices such as pressure sensor, MEMS resonator, ultrasonic transducer, etc.

Project end date: 08/26/15

Publication date: 
February 3, 2015
Publication type: 
BSAC Project Materials (Final/Archive)
PREPUBLICATION DATA - ©University of California 2015

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