BPN777: Nonepitaxial Growth of Single Crystalline III-V Semiconductors onto Insulating Substrates


III-V semiconducting materials have many characteristics such as high electron mobilities and direct band. gaps that make them desirable for many electronic applications including high performance transistors and solar cells. However, these materials generally have a high cost of production which significantly limits their use in many commercial applications. We aim to explore new growth methods which can grow high quality crystalline III-V films, using InP as an example substrate, onto non-epitaxial substrates. In addition to excellent crystal quality, critical considerations include cost and scalability for commercially viable applications.

Project end date: 08/16/17

Publication date: 
January 30, 2017
Publication type: 
BSAC Project Materials (Final/Archive)
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