BPN770: Chemical Sensitive Field Effect Transistor (CS-FET)


Silicon IC-based fabrication processing will be used to develop novel compact gas sensors that, unlike current sensors, will operate at room temperature, consume minimal power, exhibit superior sensitivity, provide chemical selectivity and multi-gas detection capabilities, and offer the prospect of very low-cost replication for broad-area deployment. We name this device structure “Chemical Sensitive FET” or “CS-FET.” The operation of the CS-FET involves transistor parametric differentiation under influence of differentiated gas exposures.

Project end date: 01/27/20

Publication date: 
August 10, 2019
Publication type: 
BSAC Project Materials (Final/Archive)
PREPUBLICATION DATA - ©University of California 2019

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