BPN755: Carrier-Selective Oxide Contacts for Silicon Electronics


Efficient carrier selective contacts are key to electronic devices based on silicon including sensors, microelectromechanical systems, field effect transistors and photovoltaics. We explore substoichiometric molybdenum trioxide (MoOx, x<3) as a dopant-free, hole-selective contact for silicon. As a proof of principle, we demonstrate a silicon solar cell with a MoOx hole contact delivering a high open-circuit voltage of 711 mV and a power conversion efficiency of 18.8%. Due to the wide band gap of MoOx, we observe a substantial gain in photocurrent of 1.9 mA/cm2 in the ultraviolet and visible part of the solar spectrum, when compared to a p-type hydrogenated amorphous silicon emitter of a traditional silicon heterojunction cell. With a high workfunction exceeding those of elemental metals, MoOx presents an important opportunity to contact holes in inorganic semiconductor materials beyond silicon including III-V semiconductors, carbon-based nanomaterials and layered transition metal dichalcogenide semiconductors.

Project end date: 08/13/14

Xingtian Yin
Thomas Rembert
Hiroshi Shiraki
Publication date: 
February 5, 2014
Publication type: 
BSAC Project Materials (Final/Archive)
PREPUBLICATION DATA - ©University of California 2014

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