BPN663: HEaTS: SiC Diodes and Rectifiers for Harsh Environment Sensing Applications


The goal of this project is to develop harsh environment rectification and sensing circuits. The devices and circuits are designed in silicon carbide (SiC) wafer due to its extraordinary performance in harsh environment such as high temperature, corrosive chemical. SiC diodes and rectifier bridges is designed, fabricated and tested in my research project to develop harsh environment sensing system.

Project end date: 01/28/14

Publication date: 
August 14, 2013
Publication type: 
BSAC Project Materials (Final/Archive)
PREPUBLICATION DATA - ©University of California 2013

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