Recently, compound semiconductor on insulator(XOI)has risen as a promising platform for next generation high performance electronics, as it inherits advantages from both SOI and high mobility III-V materials. In order to test the performance limit of this platform, we plan on fabricating ultra-short channel XOI FETs. This project will involve various controlled experiments to better understand the underlying physics of XOI FETs, thus allowing us to progress towards the ultimate XOI FET.
Project end date: 08/16/13
January 29, 2013
BSAC Project Materials (Final/Archive)
PREPUBLICATION DATA - ©University of California 2013