RTH40: Effects of Boron Concentration on Si1-xGex Properties for Integrated MEMS Technology


Because of its low thermal budget that allows to fabricate MEMS micromachined structures directly on top of electronics, SiGe MEMS technology remains very attracting for the monolithic integration of MEMS with CMOS [1]-[3]. In this scheme, p+Ge would replace Silicon dioxide as the sacrificial layer while p+ SiGe would replace poly Silicon as the structural layer.

Project end date: 09/01/05

Publication date: 
September 1, 2005
Publication type: 
BSAC Project Materials (Final/Archive)
PREPUBLICATION DATA - ©University of California 2005

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