BPN989: Defect-Induced Piezoelectricity in Silicon (New Project)

Abstract: 

Silicon, a mature platform for the semiconductor industry, has become a leading platform for future quantum technologies. As a high-purity material, it serves as a low-noise host for a variety of quantum defects. As a low-loss material, it is a desirable substrate and material platform for next generation quantum devices. However, the lack of piezoelectricity in silicon, due to its centro-symmetric structure, poses challenges for its electromechanical applications. In this project, we aim to engineer strong piezoelectric response in silicon using the atomic coherence of acceptor dopants. With strong coupling to electric field and crystal  strain, the dopants can be deployed as atomic-scale piezoelectric transducers. We will describe our design and fabrication of the device platform for characterizing and controlling the piezoelectric response of single dopants. The ability to control the piezoelectric response of single dopants will pave the way towards large-scale piezoelectricity in silicon.

Publication date: 
March 5, 2023
Publication type: 
BSAC Project Materials (Current)
Citation: 
PREPUBLICATION DATA - ©University of California 2023

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