BPN785: Scandium AlN (ScAlN) for MEMS


The goal of this project is to design, fabricate and characterize novel MEMS devices based on scandium aluminum nitride (ScAlN) thin films. ScAlN thin film is a promising piezoelectric material due to its CMOS process compatibility, low relative permittivity and high piezoelectric coefficient and enables better performance of piezoelectric MEMS devices.

Project end date: 08/07/18

Publication date: 
January 26, 2018
Publication type: 
BSAC Project Materials (Final/Archive)
PREPUBLICATION DATA - ©University of California 2018

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