BPN638: HEaTS: SiC Devices and ICs for Harsh Environment Sensing


The main objective of this research is to design and develop low power Silicon Carbide (SiC) based transistors and Integrated Circuits (ICs) that can withstand the elevated temperature, up to 600°C. The fabricated ICs will be integrated with the SiC-based sensors to develop high temperature sensing systems for various harsh environment applications.

Project end date: 01/28/14

Publication date: 
July 31, 2013
Publication type: 
BSAC Project Materials (Final/Archive)
PREPUBLICATION DATA - ©University of California 2013

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