This project aims to achieve a fully integrated MEMS reference oscillator for cell phones, particularly the GSM standard. Integrating reference oscillators on chips reduces production cost significantly while, at the same time, MEMS resonators are able to maintain the same performance as in the current off-chip quartz-based oscillator. Low-temperature metal process for MEMS structures will be developed in order to integrate MEMS with MOS devices. In addition, phase noise performance of -117dBc/Hz at 1-kHz offset from a 60-MHz carrier and -137dBc/Hz at far-from-carrier offsets will be demonstrated to meet GSM requirement.
Project end date: 01/29/10