BPN503: MEMS Poly/Nano: Compact, Organic RRAM for Transparent and Flexible Electronic Application


The goal of this project is to build a compact, transparent, polymeric resistive random access memory (RRAM) on a flexible substrate. This novel device is based on the concept of resistive switching characteristics which have already been demonstrated in many materials. The typical structure of this device is a sandwich of two metal layers separated by a functionalized insulator. This technology will enable the development of low-cost, highly reliable, high density,polymer-based nonvolatile memory devices which can be implemented in various transparent and flexible electronic systems.

Project end date: 02/03/10

Publication date: 
August 11, 2009
Publication type: 
BSAC Project Materials (Final/Archive)
PREPUBLICATION DATA - ©University of California 2009

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