BPN785: Scandium AlN (ScAlN) for MEMS

Abstract: 

The goal of this project is to design, fabricate and characterize novel MEMS devices based on scandium aluminum nitride (ScAlN) thin films. ScAlN thin film is a promising piezoelectric material due to its CMOS process compatibility, low relative permittivity and high piezoelectric coefficient and enables better performance of piezoelectric MEMS devices.

Project end date: 08/07/18

Author: 
Publication date: 
January 26, 2018
Publication type: 
BSAC Project Materials (Final/Archive)
Citation: 
PREPUBLICATION DATA - ©University of California 2018

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