Hyong is a Ph.D. student in the Electrical Engineering and Computer Sciences Department at University of California, Berkeley. He received his Bachelor's Degree in Electrical Engineering from the Univeristy of Pennsylvania in 2023. In his undergraduate research, Hyong studied quantum emission from strained 2D materials, ferroelectric field-emission transistors based on AlScN/2D material heterostructures, and scanning probe characterization of 1D-2D material interfaces. Hyong's current research at Berkeley is on fabricating next-generation Mid-Wave Infrared (MWIR) optoelectronic devices based on black phosphorous (bP).
Hyong is broadly interested in the fabrication, characterization, and commercialization of electronic and optoelectronic devices based on novel 2D semiconductors.
