Stress and strain, applied in just the right manner, can sometimes produce amazing results.
That is what researchers, led by a team at UC Berkeley’s Department of Electrical Engineering and Computer Sciences, discovered about an emerging semiconductor material — black phosphorus (BP) — used to make two types of optoelectronic devices: light emitting diodes (LEDs) and photodetectors.
Under mechanical strain, BP can be induced to emit or detect infrared (IR) light in a range of desirable wavelengths — 2.3 to 5.5 micrometers, which spans the short- to mid-wave IR — and to do so...