NanoTechnology: Materials, Processes & Devices

Research that includes:

  • Development of nanostructure fabrication technology
  • Nanomagnetics, Microphotonics
  • CMOS Integrated Nanowires/Nanotubes (CMOS-Inn)

BPN935: Low Temperature Deposited Thin Films for p-Type Field Effect Transistors and Circuits

Chunsong Zhao
2021

Developing low-temperature grown semiconducting films is critical for the development of flexible, transparent and three-dimensional monolithic integrated electronics, however, low processing temperature typically results in a poor crystallinity and a low mobility. Here, we report the realization of low-temperature fabrication of highly crystalline tellurium films with large grain size (average grain area of ~150 um2) by controlling the crystallization process of thermally evaporated Te films. Tellurium single crystals with a lateral dimensional of 6 um are realized on various...

BPN964: Metal Oxide Heterostructure Nanowires for Gas Sensing Applications

Sikai Zhao
2021

Metal oxide semiconducting gas sensors are one of the most widely used gas sensing devices due to their low cost, high reliability, solid-state, and high response. While they have been employed for the detection of various gases and in many applications, several issues remain including their limited selectivity and humidity interference. As the core part of a semiconducting gas sensor, sensing materials play the key role in determining the sensing performance of the device, with the materials’ microstructure and surface properties being the dominant factors. Thus the primary...

Javey Lab: Researchers Demonstrate New Semiconductor Device Possibilities using Black Phosphorus

August 11, 2021
William Schulz

Stress and strain, applied in just the right manner, can sometimes produce amazing results.

That is what researchers, led by a team at UC Berkeley’s Department of Electrical Engineering and Computer Sciences, discovered about an emerging semiconductor material — black phosphorus (BP) — used to make two types of optoelectronic devices: light emitting diodes (LEDs) and photodetectors.

Under mechanical strain, BP can be induced to emit or detect infrared (IR) light in a range of desirable wavelengths — 2.3 to 5.5 micrometers, which spans the short- to mid-wave IR — and to do so...

Amine-Functionalized Metal-Organic Framework ZIF-8 toward Colorimetric CO2 Sensing in Indoor Air Environment

Adrian K. Davey
Xiang Gao
Yong Xia
Zhou Li
Matthew N. Dods
Steven DelaCruz
Aifei Pan
Sanket Swamy
David Gardner
Carlo Carraro
Roya Maboudian
2021

Carbon dioxide (CO2) has been shown to contribute to human health consequences indoors, such as shortness of breath, nasal and optic irritation, dizziness, and nausea. In this work, we explore the potential of metal–organic frameworks (MOFs) as highly-porous, crystalline sorbents for sensitive colorimetric CO2 detection. In particular, the zeolitic imidazolate framework (ZIF-8) is chosen as the sorptive material due to its chemical stability and tunable CO2 affinity. The colorimetric gas sensor is developed in methanol with three components: (i) MOF ZIF-8 as a high surface area adsorbent...

BPN492: Integrated Microfactory for Nanostructure Synthesis

Eric Lee
SoonGweon Hong
2009

A microfluidic device for high-throughput synthesis of silver and gold nanostructures will be developed. We will design and fabricate microsystems that can simultaneously perform hundreds of reaction conditions on one chip with extreme precision and control. This will greatly improve the tunability of each reaction condition allowing for us to tailor the reaction conditions to synthesize nanostructures with controllable plasmon shifts. Hollow metal particles will be prepared based on a galvanic replacement reaction, which is a method driven by the electrical potential difference...

BPN399: Parallel Assembly of Nanowires using Lateral Optoelectronic Tweezers (LOET)

Steven Neale
2009

Lateral Optoelectronic Tweezers (LOET) patterns a lateral electrical field by selectively illuminating a thin photoconductive film between two metal electrodes. The resulting electrical gradients can be used to manipulate nanowires by dielectrophoresis (DEP). The goals of this project are to use this force to position, orientate and then assemble nanowires into arbitrary patterns.

Project end date: 08/11/09

BPN463: Controlled Nanoscale Doping of Semiconductors via Molecular Monolayers

Johnny C. Ho
2009

One of the major challenges towards scaling down of the electronic devices to the nm-regime is attaining controlled doping of semiconductor materials with atomic accuracy. At such small scales, the various existing technologies suffer from a number of setbacks, including an inability to achieve junction abruptness down to nm range, stochastic distribution of the dopant atoms, crystal damage, and incompatibility with nanomaterials. In this work, We report the formation of sub-5 nm ultrashallow junctions in 4” Si wafers enabled by the molecular monolayer doping of phosphorous and...

BPN501: Patterned Contact Printing with Monolayer for Aligned Nanowire Arrays

Toshitake Takahashi
Kuniharu Takei
Johnny C. Ho
Zhiyong Fan
2010

Large-area, patterned printing of nanowires by using fluorinated self-assembled monolayers (SAM) as the resist layer is demonstrated. By projecting a light pattern on the surface of the monolayer-resist in an oxygen rich environment, sticky and non-sticky regions on the surface are directly defined in a single-step process which then enables the highly specific and patterned transfer of the nanowires by the contact printing process, without the need for a subsequent lift-off step. This work demonstrates a simple route toward scalable, patterned printing of nanowires on substrates by...

BPN503: MEMS Poly/Nano: Compact, Organic RRAM for Transparent and Flexible Electronic Application

Nuo Zhang
2009

The goal of this project is to build a compact, transparent, polymeric resistive random access memory (RRAM) on a flexible substrate. This novel device is based on the concept of resistive switching characteristics which have already been demonstrated in many materials. The typical structure of this device is a sandwich of two metal layers separated by a functionalized insulator. This technology will enable the development of low-cost, highly reliable, high density,polymer-based nonvolatile memory devices which can be implemented in various transparent and flexible electronic systems...

BPN556: NiO-Based LED Fabrication

Xiaobo Zhang
Kuniharu Takei
2010

NiO is a p-type semiconductor material with band gap about 3.7 eV. It has been fabricated in the form of film by several methods, including electrodeposition[1], pulse laser deposition[2], and ion beam assisted e-beam evaporation[3]. Its applications have been limited to Nickel-ion battery, catalysts and rechargeable batteries. Very little interest and effort was put in its photoelectric applications such as light emission diodes which is primarily due to the poor quality of NiO made by the previously mentioned methods[4]. Here we are to utilize heterostructures made by p-type NiO...