NanoTechnology: Materials, Processes & Devices

Research that includes:

  • Development of nanostructure fabrication technology
  • Nanomagnetics, Microphotonics
  • CMOS Integrated Nanowires/Nanotubes (CMOS-Inn)

Ultra-Sensitive Nanosensor for Rapid Detection of PFAS in Simulated Drinking Water

Nikita Lukhanin
Keming Bai
Mia Wang
Declan M. Fitzgerald
Grigory Tikhomirov
Liwei Lin
2026

Per- and polyfluoroalkyl substances (PFAS) are a class of persistent synthetic compounds, often called “forever chemicals,” that pose a significant threat to public health and the environment. Standard detection methods primarily rely on liquid chromatography and mass spectrometry [1], which is expensive, time-intensive, and requires trained personnel and laboratory infrastructure. While emerging approaches using metal-organic frameworks (MOFs), molecularly imprinted polymers, and lateral flow assays have been explored, they have yet to provide a solution that simultaneously offers part-...

CMOS-Embedded Microfluidics for Channel-Addressable Parallel Readout of SPAD Fluorescence Lifetime Sensors

Max Ladabaum
Alexander Di
Julian M. Bao
Grigory Tikhomirov
Jun-Chau Chien
2026

We present the integration of CMOS-embedded subtractive microfluidics with single-photon avalanche diode (SPAD) fluorescence lifetime sensors, enabling independent channel addressability for parallel readout. Microfluidic channels are realized by selectively wet-etching the back-end-of-line (BEOL) metal routing above the SPAD sensors, reducing the analyte-to-active-region spacing to 7 μm while allowing for precision alignment. Simultaneous readout from two SPADs underneath two separate fluidic channels is demonstrated, establishing a pathway toward a scalable, multiplexed lab-on-CMOS...

BPNX1044: Exploring Tellurium Compound‐Based p‐Type Channels for Various Functionalities

Taehoon Kim
I K M Reaz Rahman
Naoki Higashitarumizu
Inha Kim
Hyong Min Kim
Shu Wang
Robert Tseng
2026

​Tellurium-based materials (tellurides) are promising materials for p-channel transistors due to their compatibility with various elements and deposition methods. This versatility facilitates integration into diverse device architectures and enables the implementation of tailored electrical, thermal, optical, and structural properties. We investigate tellurium-based materials and their deposition techniques to optimize these multifaceted characteristics for advanced electronic applications.

Project is currently funded by: Federal

BPNX1067: High-Efficiency Impedance Transformers for Microwave-to-Optical Quantum Transducers (New Project)

Ahmet Oguz Sakin
Nicholas Yama
Tae Gyu Ahn
2026

We are developing high-efficiency microwave impedance transformers for microwave-to-optical quantum transducers. Our goal is to match a standard 50 Ω microwave environment to a novel high-impedance electro-optic (EO) device based on a 20-kΩ impedance traveling-wave modulator. The high impedance strengthens the microwave-to-optical interaction, enhances light–matter interaction inside the EO medium, and improves the overall transduction efficiency. We will use a Klopfenstein taper design as it provides low reflection with a compact length over a broad bandwidth. We target 4–8 GHz operation...

BPNX1065: Compact, Low-Loss Capacitors for High-Coherence Merged-Element Superconducting Qubit Architectures (New Project)

Xiaoya Chen
Kerry Yu
Leo Sementilli
2026

Superconducting qubits are a leading platform for scalable quantum computing. The transmon qubit, consisting of a Josephson junction (JJ) shunted by a coplanar capacitor, is widely adopted due to its robustness against charge noise. However, its scalability is limited by the large footprint and dielectric losses at material interfaces. The merged-element transmon (MET) was introduced to enable a more compact architecture, yet in current implementations, although the JJ area can be reduced to ~3 µm², the coplanar capacitor still occupies ~100 µm². Moreover, its planar geometry generates...

BPNX1064: Annealed Al/AlOx/Al Josephson Junctions for High-Coherence Merged-Element Superconducting Qubits (New Project)

Darius F. Vera
Leo Sementilli
Kerry Yu
2026

Superconducting transmon qubits are one of the most promising platforms to realize fault-tolerant quantum computing and allow a rich parameter space of highly configurable qubit properties with various circuit elements. Ultra thin amorphous oxide tunnel barriers (such as Al/AlOx/Al) known as Josephson junctions (JJ) provide essential nonlinearity to the qubit energy landscape. Precise control over the morphology of these thin amorphous oxide tunnel barriers remains a significant challenge despite its critical role in determining structural and transport properties. Furthermore, materials...

BPNX1062: Coherent Quantum Emitter Creation via Delta Doped Silicon-On-Insulator Photonics (New Project)

Enrique Garcia
Hanbin Song
Lukasz Komza
2026

Color centers in solid-state materials are promising candidates as single-photon emitters for quantum information technologies. For color centers in silicon, ion implantation and subsequent annealing are used to create emitters in wafers at a desired density. However, ion implantation introduces damage and additional defects into the silicon lattice, potentially impacting charge environments local to color centers. In this project, we focus on the creation of silicon T centers, which are point defects composed of two carbon atoms, and one hydrogen atom. We propose to use epitaxially grown...

BPNX1059: Electric Field Control of Quantum Emitters in Silicon (New Project)

Lukasz Komza
Hanbin Song
Niccolo Fiaschi
Enrique Garcia
Ahmet Oguz Sakin
2026

Color centers in silicon are promising building blocks for photonic quantum processors. The T center, with its long spin coherence and telecom-band optical transitions, is a particularly compelling candidate for quantum repeater and memory applications. However, the impact of local charges and spins introduced during device integration remains poorly understood. In this work, we develop a silicon photonics platform that enables probing of single T centers under applied electric and magnetic fields, allowing systematic investigation of Stark shifts and ionization dynamics. These...

BPNX1046: Multi-Material DLP Printing for 3D Electronics via Selective Deposition

Shuo Zhang
David Hahn
Haotian Lu
Ju Young Park
Wenjie (Jeff) Li
Jiayan Zhang
2026

The development of 3D MEMS devices has enabled innovative sensor designs with enhanced functionality, yet conventional fabrication methods often impose geometric and process limitations. This work presents a micro-3D-printed tactile sensor, integrating 3D piezoelectric, capacitive, conductive and dielectric elements with a compliant mechanism to achieve high sensitivity and force decoupling capability. The sensor is fabricated using a multi-material digital light processing (DLP) method, followed by selective metallization to define conductive regions, enabling seamless...

BPN980: Spin-Photon Interfaces in Silicon Photonics

Hanbin Song
Lukasz Komza
Niccolo Fiaschi
Xueyue (Sherry) Zhang
Yu-Lung Tang
Yiyang Zhi
2026

Point defects in crystalline materials can introduce localized defects states with optical transitions, creating color centers. Color centers in silicon have recently shown their potential as telecom-band single photon emitters. Leveraging the mature semiconductor fabrication techniques, silicon color centers can be fabricated on a large scale and are compatible with integrated photonics. Among all the silicon color centers investigated so far, T centers provide a spin-photon interface suitable for quantum networking and communication applications. In this project, we demonstrate coherent...