BPNX1054: Tungsten Oxide Adhesion Layer for Low Resistance Hole Contacts to WSe2

Transition metal dichalcogenides (TMDs) are promising candidates for rapidly scaled, high-performing devices due to their atomically thin nature. However, the dangling bond-free surfaces of TMDs fundamentally challenge the creation of strongly bonded metal contacts. Here, we introduce tungsten oxide (WOx) as an interfacial adhesion layer for low-resistance hole contacts on monolayer WSe2. We show that the WOx adhesion layer exhibits a two-fold increase in adhesion force on both WSe2 and SiO2 surfaces and a twofold reduction in total resistance compared to devices with conventional titanium adhesion layers.

Project is currently funded by: Federal