Abstract:
Long term goal for this project is to develop a robust deep reactive ion etch process for a smooth sidewall through wafer etching, while maintaining a straight profile, good etch rate, and reasonable selectivity.
Project end date: 01/20/05
Publication date:
September 10, 2004
Publication type:
BSAC Project Materials (Final/Archive)
Citation:
PREPUBLICATION DATA - ©University of California 2004