BSAC4: DRIE Process Optimization for Very Smooth Sidewall Etch


Long term goal for this project is to develop a robust deep reactive ion etch process for a smooth sidewall through wafer etching, while maintaining a straight profile, good etch rate, and reasonable selectivity.

Project end date: 01/20/05

Ning Chen
Publication date: 
September 10, 2004
Publication type: 
BSAC Project Materials (Final/Archive)
PREPUBLICATION DATA - ©University of California 2004

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