BPN389: SiC TAPS: Characterization of Silicon Carbide Ion Beam Assisted Deposition (IBAD) Films


Silicon Carbide (SiC) is an appealing material for harsh environment MEMS applications. It can be sputtered at low temperatures by an Ion-Beam Assisted Deposition (IBAD) system to produce amorphous thin-films and vacuum encapsulations. The goal of this project is to investigate the stress-temperature relation of these amorphous SiC films in order to calculate their biaxial moduli and coefficients of thermal expansion. The “double-substrate technique” is employed to compare the differences in these properties for films that are sputtered both with and without ion-beam assistance on quartz and silicon substrates. Characterizing these films will determine if certain issues, such as thermal and stress mismatches, will pose a problem in certain applications.

Project end date: 08/14/07

Matt Chan
Publication date: 
July 29, 2007
Publication type: 
BSAC Project Materials (Final/Archive)
PREPUBLICATION DATA - ©University of California 2007

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