BPN306: SiC TAPS: Ion Beam Assisted Deposition (IBAD) Encapsulation

Abstract: 

The goal of this project is to develop a low temperature, wafer-level vacuum encapsulation technique for harsh environment, silicon carbide (SiC) sensors.

Project end date: 08/07/07

Author: 
Debbie G. Jones
Publication date: 
February 4, 2007
Publication type: 
BSAC Project Materials (Final/Archive)
Citation: 
PREPUBLICATION DATA - ©University of California 2007

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