Roger T. Howe (Advisor)

Excimer Laser Annealing of Silicon Germanium for MEMS Applications

Carrie W. Low
Roger T. Howe
Tsu-Jae King
2004
Poly-SiGe is a promising material for modular integration of MEMS with electronics due to its low process thermal budget. Poly-SiGe can be deposited on top of standard CMOS electronics in a LPCVD reactor as a replacement of poly-Si as MEMS structure material. Deposition temperature at 450 °C along with 550 °C rapid thermal annealing can result good electrical and mechanical properties of the SiGe film. SiGe films deposited at lower temperature have degradations in mechanical properties, such as high ...

Design and Implementation of Sigma-Delta Force-Balance Microaccelerometers

Crist Lu
Bernhard E. Boser
Roger T. Howe
1994

The first goal of this research is to investigate the issues involved in the design of a sigma-delta force- balance surface-micromachined accelerometer. The second goal is to successfully design, fabricate, and test a monolithic m...

Articulated Mechanisms and Electrostatic Actuators for Autonomous Microrobots

Richard Yeh
Kristofer S.J. Pister
Roger T. Howe
Dorian Liepmann
2001

Enabled by advances in both integrated circuit technology and micro electromechanical systems (MEMS), the continuing miniaturization and integration of electronics, sensors, and actuators and mechanisms will make it feasible to create insect-sized autonomous microrobots. We propose to create a class of autonomous crawling microrobots the size on the order f 1cm^3 and equipped with a power source, low-power CMOS controller, sensors, wireless communications devices and motorized articulated legs. The work presented here demonstrates how articulated insect legs could be created from rigid...

A Micro-Electro-Mechanical Systems (MEMS) Device to Measure the Fracture Strain of Polycrystalline Silicon

Peter Truxtun Jones
Roger T. Howe
1995

The past decade has witnessed the establishment of a new field of technology concerned with the manufacture of microscopic sensors and actuators, known as Micro-Electro-Mechanical-Systems (MEMS). The field of MEMS is based on the use of integrated circuit fabrication techniques to create...

A Large-Displacement Out-of-Plane SOI Actuator for Applications in Confocal Microscopy

Christopher Rulon Bowes-Lyon Ellis
Luke P. Lee
Roger T. Howe
2001

A silicon-on-insulator actuator has been designed for large DC deflections out of the plane of a wafer. The design employs deep reactive ion etching with a delay mask of two distinct silicon dioxide thicknesses to form silicon structures...

Adaptive Control Strategies for MEMS Gyroscopes

Sungsu Park
Roberto Horowitz
Roger T. Howe
Bernhard E. Boser
2000
This dissertation presents adaptive control strategies for MEMS z-axis gyroscopes. Specifically, a unified methodology is proposed for designing and analyzing the performance of control algorithms that can identify and, in an adaptive fashion, compensate for most fabrication defects...

Miniature Gaseous Light Sources

Hsi-Jen Yeh
Richard S. Muller
Roger T. Howe
1991

This report describes miniature gas-filled plasma-discharge cavities fabricated using combined surface and subsurface micromachining. Starting with a bare silicon substrate, successive layers of polycrystalline silicon, low-stress silicon nitride, and low-temperature oxide layers were deposited to form the micro cavities. Polysilicon electrodes were patterned to serve as electrical connections to the gas. Low-stress silicon nitride formed the insulating layer and the cavity wall which confined neon at atmospheric pressure. Low-temperature oxide served as the sacrificial layer which defined...

Microstructure Micropackaging

Kristen M. McNair
Roger T. Howe
Richard M. White
1991

Two processes are developed to fabricate electrostatic comb drives hermetically encapsualted in a silicon nitride or polysilicon micropackage. To fabricate the silicon nitride micropackage, high-doped phosphosilicate glass is deposited, after the electrostatic comb-drive process is complete except for the release etch, and reflowed to form a mould for the silicon nitride microshell. The mould is patterned with a 5:1 BHF wet etch, and then the etch channel layer of phosphosilicate glass is deposited and patterned with a wt etch. The silicon nitride microshell layer is depositied, and holes...

Micromechanical Electrostatic Voltmeter

Charles Heng-Yuan Hsu
Richard S. Muller
Roger T. Howe
1991

A microminiature, noncontracting electrostatic voltmeter (ESV), produced by IC processes on a silicon wafer, is described. The ESV works on the principle of intermittent shuttering and exposing a sensing electrode to an electric field between a remote electrode at a different potential from the sensing electrode. The resultant time-varying field at the electrode produces an electrical signal. The principle of ESV measurements by intermittent shuttering is well establihsed and hybrid designs are presently used commerically. This invention teaches how the entire structure, and eventually the...

Analysis and Characterization of the Vertical Carrier Domain Magnetometer

Bret S. Burns
Richard S. Muller
Roger T. Howe
1989
The point of semiconductor device analysis is to find useful predictors of device performance. With these we can design to specifications, uncover promising directions for improving device operation, and understand device limitations. An actual device has no...