Ali Javey (Advisor)

Research Advised by Professor Ali Javey

Javey Group:  List of Projects | List of Researchers

BSAC's Best: Spring 2016 Winners Announced

March 4, 2016

BSAC would like to thank the 160 researchers who presented their work in poster or plenary sessions at the Spring 2016 BSAC Research Review on March 2-4.

70 attending industrial members from 35 member organizations voted for the best presentations and posters, resulting in Best Paper and Best Poster awards (certificate and cash).

 Youmin Wang Best Paper Dr. Youmin Wang | Advisor: Prof....

BSAC's Best: Fall 2020 Oral Presentation Winners Announced

September 24, 2020

BSAC would like to thank all of the researchers who presented their research during BSAC's Fall 2020 Research Review, September 21-23.

BSAC Industrial Members voted for their favorite oral presentations and the results are in. Please join us in congratulating the winners of the Fall 2020 Best of BSAC honors, Mallika Bariya and Daniel Teal!


Hyungjin Kim

Electrical Engineering and Computer Sciences
Professor Ali Javey (Advisor)
Ph.D. 2021

Hyungjin Kim received the B.S. and M.S. in Electrical and Computer Engineering from Seoul National University, Korea in 2014 and 2016, respectively. He is currently pursuing a Ph.D. in Electrical Engineering and Computer Sciences at UC Berkeley under the supervision of Prof. Ali Javey and expected to graduate in 2021.

BPN704: Vapor-Liquid-Solid Growth of Polycrystalline Indium Phosphide Thin Films on Metal

Wenbo Ji

Here, we develop a technique that enables direct growth of III-V materials on non-epitaxial substrates. Here, by utilizing a planar liquid phase template, we extend the VLS growth mode to enable polycrystalline indium phosphide (InP) thin film growth on Mo foils.

Chunsong Zhao

Materials Science & Engineering
Professor Ali Javey (Advisor)
Ph.D. 2021

BPN935: Low Temperature Deposited Thin Films for p-Type Field Effect Transistors and Circuits

Chunsong Zhao

Developing low-temperature grown semiconducting films is critical for the development of flexible, transparent and three-dimensional monolithic integrated electronics, however, low processing temperature typically results in a poor crystallinity and a low mobility. Here, we report the realization of low-temperature fabrication of highly crystalline tellurium films with large grain size (average grain area of ~150 um2) by controlling the crystallization process of thermally evaporated Te films. Tellurium single crystals with a lateral dimensional of 6 um are realized on various...

Dopant Profiling of III-V Nanostructures for Electronic Applications

Alexandra Ford
Yuri Suzuki
Junqiao Wu
Ali Javey

High electron mobility III-V compound semiconductors such as indium arsenide (InAs) are promising candidates for future active channel materials of electron devices to further enhance device performance. In particular, compound semiconductors heterogeneously integrated on Si substrates have been studied, combining the high mobility of III-V semiconductors and the well-established, low cost processing of Si technology. However, one of the primary challenges of III-V device fabrication is controllable, post-growth dopant profiling. Here InAs nanowires and ultrathin layers (nanoribbons...

Device Physics and Material Properties of Two-Dimensional Semiconductors

Sujay Desai
Ali Javey
Junqiao Wu
Tsu-Jae King Liu
Jeffrey Bokor

Device architecture and materials innovations have enabled transistor scaling for the last several decades, boosting the performance of electronics, increasing the speed of communication and computational systems, lowering power consumption and reducing costs per operation. Two-dimensional (2D) materials have gained tremendous attention in the last decade, after the discovery of graphene which has exceptional properties like high carrier mobility, ultra-thin van der Waals connected layers (~ 0.3 nm thick), high tensile strength, etc.

Transition metal...

Material Science and Device Physics of Semiconductors on Arbitrary Substrates

Rehan Kapadia
Ali Javey
Sayeef Salahuddin
Daryl Chrzan

Since the beginnings of the semiconductor revolution, device engineering and material development have been deeply interconnected. Innovations in one invariably spurred development in the other. One of the most important current challenges are developing techniques which enable deposition of materials on arbitrary substrates and the design constraints of devices fabricated via these techniques. This thesis focuses on furthering the materials development-device design cycle for three techniques: (i) epitaxial lift-off, (ii) nanowire growth via the vapor-liquid-solid growth mode, and (...