Ali Javey (Advisor)

Research Advised by Professor Ali Javey

Matin Amani

Alumni
Electrical Engineering and Computer Sciences
Professor Ali Javey (Advisor)
Ph.D. 2019

Kevin Chen

Alumni
Electrical Engineering and Computer Sciences
Professor Ali Javey (Advisor)
Ph.D. 2017

Peida (Peter) Zhao

Alumni
Electrical Engineering and Computer Sciences
Professor Ali Javey (Advisor)
Ph.D. 2018

Understanding and Engineering Surface and Edge Defects of Transition Metal Dichalcogenides

Peida (Peter) Zhao
Ali Javey
Ming C. Wu
Daryl Chrzan
2018
Since the inception of solid state semiconductors and device fabrication techniques, continuous scaling has been implemented as a key driver behind realizing faster electronics while optimizing for power consumption, improving the field in an exponential fashion (i.e. Moore’s Law) and facilitating modern technological advances that otherwise would have been impossible. In recent years, transistor gate length...

Mark Hettick

Alumni
Electrical Engineering and Computer Sciences
Professor Ali Javey (Advisor)
Ph.D. 2018

Jerry (Li-Chia) Tai

Alumni
Electrical Engineering and Computer Sciences
Professor Ali Javey (Advisor)
Ph.D. 2020

BPN463: Controlled Nanoscale Doping of Semiconductors via Molecular Monolayers

Johnny C. Ho
2009

One of the major challenges towards scaling down of the electronic devices to the nm-regime is attaining controlled doping of semiconductor materials with atomic accuracy. At such small scales, the various existing technologies suffer from a number of setbacks, including an inability to achieve junction abruptness down to nm range, stochastic distribution of the dopant atoms, crystal damage, and incompatibility with nanomaterials. In this work, We report the formation of sub-5 nm ultrashallow junctions in 4” Si wafers enabled by the molecular monolayer doping of phosphorous and...

BPN501: Patterned Contact Printing with Monolayer for Aligned Nanowire Arrays

Toshitake Takahashi
Kuniharu Takei
Johnny C. Ho
Zhiyong Fan
2010

Large-area, patterned printing of nanowires by using fluorinated self-assembled monolayers (SAM) as the resist layer is demonstrated. By projecting a light pattern on the surface of the monolayer-resist in an oxygen rich environment, sticky and non-sticky regions on the surface are directly defined in a single-step process which then enables the highly specific and patterned transfer of the nanowires by the contact printing process, without the need for a subsequent lift-off step. This work demonstrates a simple route toward scalable, patterned printing of nanowires on substrates by...

BPN386: CMOS-Integrated Nanowire-Based Molecular and Gas Sensors

Karl Skucha
2010

This project first aims to develop a process flow to integrate silicon nanowires onto a CMOS substrate, both via and top-down and bottom-up processes. Then, by carefully designing the underlying circuitry and functionalizing the nanowire transducers, we hope to demonstrate a fully functional integrated sensing platform for various molecular agents and/or gases. The overall goal and application is to create an easy-to-use CMOS-based sensing system for low-cost portable applications.

Project end date: 02/04/10

BPN556: NiO-Based LED Fabrication

Xiaobo Zhang
Kuniharu Takei
2010

NiO is a p-type semiconductor material with band gap about 3.7 eV. It has been fabricated in the form of film by several methods, including electrodeposition[1], pulse laser deposition[2], and ion beam assisted e-beam evaporation[3]. Its applications have been limited to Nickel-ion battery, catalysts and rechargeable batteries. Very little interest and effort was put in its photoelectric applications such as light emission diodes which is primarily due to the poor quality of NiO made by the previously mentioned methods[4]. Here we are to utilize heterostructures made by p-type NiO...