Dr. Giorgio Casinovi
Georgia Institute of Technology, Integrated MEMS Laboratory
October 11, 2011 | 12:00 to 01:00 | 540 Cory Hall, DOP Center Conference Room
Host: John Huggins
Silicon RF MEMS devices, such as resonators and filters, have the potential to replace conventional electronic and mechanical devices in a variety of applications. If this is to happen, one of the problems that must be solved is the development of a systematic methodology to generate models for such devices that are computationally efficient, yet sufficiently general and accurate to be used in place of finite element simulations. As a case study, this talk will present an approach to RF resonator modeling in which the governing equations of the device take a central role in the derivation of the device model. Advantages and limitations of this approach will be highlighted and discussed. Finally, the question of what conclusions can be drawn from this case study with regard to the more general problem of RF MEMS modeling will be examined.
www.ece.gatech.edu/research/integrated-mems
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