Dr. John Heck
Intel Research
October 13, 2009 | 12:00 to 01:00 | 540 Cory Hall, DOP Center Conference Room
Host: John Huggins
Intel and Nanochip have jointly developed a probe storage device employing a high lateral displacement mover with a non-volatile media film that is addressed by an array of actuated probe tips. The storage media is a ferroelectric film grown directly on the silicon mover which is actuated electromagnetically. The probe tips are formed on poly-SiGe MEMS cantilevers that are integrated directly on standard CMOS. The cantilever/probe array and media/mover are bonded together with a cap wafer and sealed at wafer level. This presentation will provide an overview of the major components and their integration into a high-storage density memory device.
---
Interested in nominating someone to speak at the BSAC Technology Seminar? We welcome you to submit a speaker nomination here