Dr. Kazushi Hayashi
Kobelco Research Institute, Kobe Steel, Ltd.
December 6, 2016 | 03:00 to 04:00 | 531 Cory Hall
Host: Jim Cheng
The Sputtering Target Division of KOBELCO RESEARCH INSTITUTE, a subsidiary of Kobe Steel, Ltd., has been developing original sputtering targets for new thin films, proposing a wide range of industrial applications in FPD, Optical Discs, and power electronics field. The Electronics Research Laboratory of Kobe Steel, Ltd has a long experiences with sputtering, micro fabrication and testing systems and is responsible for the development of thin film materials. In this presentation, after a brief introduction of the Electronics Research Laboratory of Kobe Steel, Ltd., I will present the following two topics. 1) Evaluation of Sub-Gap States in Amorphous In-Ga-Zn-O Thin Films Treated with Various Process Conditions This topic will be presented in 2013 MRS fall meeting in Boston. It is widely recognized that oxide semiconductors such as amorphous In-Ga-Zn-O (a-IGZO) are promising channel materials for thin-film transistors (TFTs) in next generation flat panel display since they have higher electron mobility than conventional materials like amorphous Si. A crucial issue for realization of practical TFTs is comprehension of their electronic properties, especially information on sub-gap states in the a-IGZO thin films that govern the TFT performance. In the present study, capacitance-voltage (C-V) characteristics and ICTS measurements were applied to evaluate the sub-gap states in the a-IGZO thin films treated with various processes. Influences of the sputtering conditions on the electronic properties of the a-IGZO thin films were discussed. 2) High Thermally Durable Aluminum Alloy Thin Film for LTPS and IGBT Emitter Electrodes We have developed a new highly heat resistive Al-alloy thin film for gate interconnections of low-temperature poly-silicon (LTPS)-thin film transistors (TFTs). Conventional refractory metal films such as Mo-alloy can be replaced by the proposed alloy system that is stable until 600 deg. with a low resistivity. Furthermore, in order to response to the recent demand on power electronics applications, we have developed advanced Al-alloy thin films for IGBT emitter electrodes. The features are high heat resistance, spike-free into junction of Si substrate, damage less bonding to Si substrate , and low residual stress.
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