Prof. Masayoshi Esashi
Advanced Institute for Materials Researcher, Tohoku University
June 14, 2011 | 12:00 to 01:00 | 540 Cory Hall, DOP Center Conference Room
Host: Al Pisano
The Microsystem Integration Center was established in 2010 to develop integrated microsystems aimed at the competitiveness of industry based on MEMS technology. There are 20 professors and 16 non-competitive companies involved in the Microsystem Integration Initiative Project for ten years (2007~2016). The LSI wafers processed in external foundries are shared by many projects in order to fabricate the MEMS on the LSI cost-effectively. Knowledge and fundamental patents are shared by companies as well. Another project called “Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST)” is a five year project (2009~2013) collaborating with the Research Center for Ubiquitous MEMS (director: Dr. R. Maeda) in the National Institute of Advanced Industrial Science and Technology (AIST) in Tsukuba. Industrial problems as the economic crisis of advanced LSI are expected to be solved in the program by the following approaches. The integration of heterogeneous components on an Si chip (hetero integration) is required for value added devices. Multi-frequency filters of disk resonators fabricated on an LSI chip was developed with the National Institute for Communication Technology (NICT) to use radio frequency resources effectively. The flexible small scale facility in Tohoku University to process 20mm square wafers is used for the initial stage prototyping and the achievements are followed by the facility in AIST to process on large wafers (8 inch) for a production stage prototyping. The development of massive parallel electron beam (EB) exposure systems aims maskless process to produce small volume advanced LSI cost effectively. Nanocrystalline Si electro emitter developed by Prof. N. Koshida at Tokyo University of Agriculture and Technology and Crestec, Inc., has an advantage of low voltage emission. The active matrix electron emitter fabricated on an LSI is under development based on the framework of the shared wafer. The hands-on access fab is the facility that companies can easily access and utilize for their prototyping or small volume production. It is equipped with 4 and 6 inch facilities. The users are charged depending on their amount of usage and can access a lot of technology and know-how accumulated at Tohoku University and assistance from skilled engineers. The problem of the disaster by earthquake which we suffered in Sendai will also be discussed.
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