December 17, 2014
Prof. Mina Rais-Zadeh
Electrical and Computer Engineering Department, University of Michigan
December 17, 2014 | 12:30 to 01:30 | 540 Cory Hall
Host: Clark Nguyen
In the past few years there has been rapid growth of III-V semiconductors geared toward a variety of applications where silicon performance falls short. GaN, a III-V semiconductor, has proven to be the material of choice for high-frequency, high-power, and high-temperature applications. GaN also offers a number of excellent mechanical properties making it a suitable material for acoustic microsystems. The presentation will describe the application of GaN in timing, integrated sensing, and acoustic meta-materials.
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